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TYPICAL PERFORMANCE CURVES (R)
APT40GP90JDQ2 900V
APT40GP90JDQ2
POWER MOS 7 IGBT
(R)
E G C
E
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * SSOA Rated
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT40GP90JDQ2 UNIT Volts
900 30
@ TC = 25C
64 27 160 160A @ 900V 284 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
900 3 4.5 3.2 2.7 350
2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
A nA
9-2005 050-7491 Rev A
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
1500
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT40GP90JDQ2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 450V I C = 40A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V RG = 4.3 I C = 40A VGE = 15V MIN TYP MAX UNIT pF V nC
3300 325 35 7.5 145 22 55 160 14 23 90 60 TBD 1350 795 14 23 130 90 TBD 2280 1245 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V RG = 4.3 I C = 40A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.44 1.1 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
9-2005 Rev A
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained h
050-7491
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
160 140 IC, COLLECTOR CURRENT (A)
APT40GP90JDQ2
TJ = -55C
120 100 80 60 40 20 0
TJ = -55C TJ = 25C TJ = 125C
TJ = 25C TJ = 125C
200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 40A C T = 25C
J
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 180V VCE = 450V
8 6 4 2 0 0 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 4, Gate Charge
80 60 40 20 0 0
TJ = -55C TJ = 25C TJ = 125C 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE = 720V
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 80A
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5.0
4.0
IC = 80A IC = 40A
IC = 40A
3
3.0
IC = 20A
2
2.0
IC = 20A
1
1.0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
80 70 60 50 40 9-2005 050-7491 Rev A 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
1.05
1.00
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
20 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
140 120 100 80 60 40 20 VCE = 600V RG = 4.3
VGE =15V,TJ=25C VGE =15V,TJ=125C
APT40GP90JDQ2
15
VGE = 15V
10
5
100 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 0
0
VCE = 600V TJ = 25C or 125C RG = 4.3 L = 100H
100 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 0
0
L = 100H
70 60 50 40 30 20 10
RG = 4.3, L = 100H, VCE = 600V
120 100 tf, FALL TIME (ns) 80 60 40
RG = 4.3, L = 100H, VCE = 600V
TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
TJ = 25C, VGE = 15V
20
TJ = 25 or 125C,VGE = 15V
100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
0
100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
0
6000 EON2, TURN ON ENERGY LOSS (J) 5000 4000 3000 2000 1000 0
EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R = 4.3
G
3500 3000 2500 2000 1500 1000 500 0
= 600V V CE = +15V V GE R = 4.3
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000
J
SWITCHING ENERGY LOSSES (J)
= 600V V CE = +15V V GE T = 125C
Eon2,80A
6000 5000 4000 3000 2000
= 600V V CE = +15V V GE R = 4.3
G
Eon2,80A Eoff,80A
Eoff,80A Eon2,40A
9-2005
Eoff,40A Eoff,20A
Eon2,20A
Eon2,40A
Eoff,40A Eon2,20A
Rev A
1000 0
Eoff,20A
050-7491
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
7,000 Cies IC, COLLECTOR CURRENT (A)
180 160 140 120 100 80 60 40 20
APT40GP90JDQ2
C, CAPACITANCE ( F)
P
1,000 500 Coes 100 50 Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.50
ZJC, THERMAL IMPEDANCE (C/W)
0.40
D = 0.9 0.7
0.30
0.5 0.20 0.3 0.10 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
140 100
Junction temp. (C) RC MODEL
FMAX, OPERATING FREQUENCY (kHz)
50
0.0940
0.0117
10 5
T = 125C J T = 75C C D = 50 % V = 600V CE R = 4.3
G
Power (Watts)
0.204
0.136
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.142 Case temperature. (C)
1.07
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10
050-7491
Rev A
9-2005
APT40GP90JDQ2
APT30DQ100
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr
Collector Current 90%
5%
10%
5% CollectorVoltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
TJ = 125C td(off) 90% tf 10% CollectorVoltage
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7491
Rev A
9-2005
TYPICAL PERFORMANCE CURVES
APT40GP90JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 92C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 30A Forward Voltage IF = 60A IF = 30A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT40GP90JDQ2 UNIT Amps
30 39 210
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.3 2.8 1.7
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
ZJC, THERMAL IMPEDANCE (C/W)
Characteristic
Test Conditions
Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 1.00 0.80 0.60 0.40 0.20 0 10-5 D = 0.9
25 240 355 4 305 1575 9 135 2270 27 -
IF = 30A, diF/dt = -200A/s VR = 667V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 667V, TC = 125C
IF = 30A, diF/dt = -1000A/s VR = 667V, TC = 125C
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-4 SINGLE PULSE
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction temp. (C) RC MODEL
Case temperature. (C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7491
0.341
0.267
Rev A
Power (watts)
0.461
0.0463
9-2005
0.291
0.00306
100 trr, REVERSE RECOVERY TIME (ns) 90 IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 25C TJ = -55C TJ = 175C TJ = 125C
400 350 300 250 200 150 100 50 30A 15A 60A
APT40GP90JDQ2
T = 125C J V = 667V
R
0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 3500 Qrr, REVERSE RECOVERY CHARGE (nC) 3000 2500 2000 1500 1000 500 0
T = 125C J V = 667V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 25 20 15 10 5 0
T = 125C J V = 667V
R
0
60A
60A
30A
30A
15A
15A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 trr trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 50 45 40 35 IF(AV) (A) 30 25 20 15 10 5
Duty cycle = 0.5 T = 175C
J
IRRM
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 160 CJ, JUNCTION CAPACITANCE (pF) 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
050-7491
Rev A
9-2005
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT40GP90JDQ2
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
9-2005 050-7491 Rev A
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5 ,045,903 5 ,089,434 5 ,182,234 5 ,019,522
Dimensions in Millimeters and (Inches)
,503,786 5 ,256,583 4 ,748,103 5 ,283,202 5 ,231,474 5 ,434,095 5 ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ll 5,262,336 6

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